Resonance Raman scattering induced by interface roughness in a short-period GaAs/As superlattice
- 15 February 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (5), 3254-3257
- https://doi.org/10.1103/physrevb.39.3254
Abstract
We have studied by means of resonant Raman scattering, photoluminescence, and photoexcitation the interface (IF) modes, as well as the electronic system and the coupling mechanism between electrons and phonons in a short-period superlattice. We observe the resonance of Raman scattering by the IF modes with the n=2 electronic transition. From explicit calculations of the Raman cross section we conclude that the coupling mechanism is the intraband Fröhlich interaction induced by the roughness at the interfaces.Keywords
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