High-Frequency Resonant Transistor DC-DC Converters
- 1 May 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industrial Electronics
- Vol. IE-31 (2), 181-191
- https://doi.org/10.1109/tie.1984.350066
Abstract
Transistor dc-dc converters which employ a resonant circuit are described. A resonant circuit is driven with square waves of current or voltage, and by adjusting the frequency around the resonant point, the voltage on the resonant components can be adjusted to any practical voltage level. By rectifying the voltage across the resonant elements, a dc voltage is obtained which can be either higher or lower than the input dc voltage to the converter. Thus, the converter can operate in either the step-up or step-down mode. In addition, the switching losses in the inverter devices and rectifiers are extremely low due to the sine waves that occur from the use of a resonant circuit (as opposed to square waves in a conventional converter); also, easier EMI filtering should result. In the voltage input version, the converter is able to use the parasitic diode associated with an FET or monolithic Darlington, while in the current input version, the converter needs the inverse blocking capability which can be obtained with an IGT or GTO device. A low-power breadboard operating at 200-300 kHz has been built. Two typical application areas are switching power supplies and battery chargers. The converter circuits offer improvements over conventional circuits due to their high efficiency (low switching losses), small reactive components (high-frequency operation), and their step-up/stepdown ability.Keywords
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