Interface states at (111) heterojunctions
- 1 February 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 80, 134-140
- https://doi.org/10.1016/0039-6028(79)90671-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electronic structure of the GeGaAs (111) and (
- Theory of the energy-band lineup at an abrupt semiconductor heterojunctionPhysical Review B, 1977
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Existence of localized electronic states at interfacesSurface Science, 1976
- On the Description of Covalent Bonds in Diamond Lattice Structures by a Simplified Tight-Binding ApproximationJournal of Applied Physics, 1962