MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

Abstract

GaAs with a mirror-like surface is grown by MOCVD on an Si substrate using an AlP, AlGaP, GaP/GaAs_0.5P_0.5 super-lattice and GaAs_0.5P_0.5/GaAs superlattice as intermediate layers. The photoluminescence intensity is found to be about 56% of that of a GaAs substrate grown under the same conditions and is one order of magnitude higher than that grown on a Ge-coated Si substrate, in spite of the early stage of the experiment.