Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9), 791-793
- https://doi.org/10.1063/1.93705
Abstract
Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-μm cavity length and with 35–45% differential quantum efficiency have been obtained.Keywords
This publication has 7 references indexed in Scilit:
- AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integrationApplied Physics Letters, 1982
- AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiodeElectronics Letters, 1982
- Chemically etched-mirror GaInAsP/InP lasers - ReviewIEEE Journal of Quantum Electronics, 1982
- Groove GaInAsP laser on semi-insulating InPElectronics Letters, 1981
- Single-wavelength operation of 1.53 μm GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector under direct modulation up to 1 GHzElectronics Letters, 1981
- GaAs double heterostructure lasers fabricated by wet chemical etchingJournal of Applied Physics, 1976
- Monolithic Ga1−xInxAs mesa lasers with grown optical facetsJournal of Applied Physics, 1975