Temperature Effects in Coherent GaAs Diodes
- 1 September 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (9), 2746-2750
- https://doi.org/10.1063/1.1729803
Abstract
The radiation output of GaAs coherent diodes has been studied for temperatures between 4° and 125°K. The coherent output follows the temperature variation of the band gap of pure GaAs. The threshold current follows no simple temperature dependence. It rises exponentially for temperatures below 30°K with the slope 0.9%/°K and seems to vary as T3 for T above 100°K. The temperature variation of the cavity modes is calculated, and agrees with experiment to within 5%. These results are briefly discussed in terms of a band‐to‐band model for the radiation.Keywords
This publication has 6 references indexed in Scilit:
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- STIMULATED EMISSION OF RADIATION FROM GaAs p-n JUNCTIONSApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Group III-Group V CompoundsSolid State Physics, 1956