Effects of doping pairs on the preparation and dielectricity of PLZT ceramics
- 1 March 1986
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 67 (1), 93-102
- https://doi.org/10.1080/00150198608245011
Abstract
By doping Li2CO3, Na2CO3, B2O3 and Bi2O3 into PLZT 8/65/35, the diffuse phase transition is enhanced and the sintering temperature is lowered. In order to balance out the charge fluctuations caused by doping, a R-a-R3+b pair doping is adopted. Low temperature coefficient of capacitance (TCC) of the doped PLZT 8/65/35 can be obtained by Na+-B3+ or Li+-Bi3+ pair dopings. The sintering temperature is lowered down to 1050°C or below. The enhancement in diffuse phase transition is explained by the possible interstitial site occupancy of Li+ and Bi3+. Annealing in air at 970°C can effectively drive out the doped ions, and cause the recovery of the lattice structure.Keywords
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