Formation of Silicon and Titanium Carbides by Chemical Vapor Deposition
- 1 February 1968
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 51 (2), 84-87
- https://doi.org/10.1111/j.1151-2916.1968.tb11842.x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The vapour pressure of titanium tetrachlorideJournal of Inorganic and Nuclear Chemistry, 1965
- Electronic Conduction in Silicon CarbideThe Journal of Chemical Physics, 1953
- Siliciumwasserstoffe. III: Disiloxan, (Si H3)2 O; zur Kenntnis des Tetrachlor monosilans, Si Cl4, und des Hexachlor‐disiloxans, (Si Cl3)2 OEuropean Journal of Inorganic Chemistry, 1917
- CLXXI.—The preparation at high temperatures of some refractory metals from their chloridesJournal of the Chemical Society, Transactions, 1909