Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy

Publisher Website
Google Scholar
Abstract
InAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420V/W at 77K and 300meV photon energy with a load resistor of 100Ω and a bias voltage of 1.5V.