Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells

Abstract

The intermediate-band solar cell (IBSC) has been proposed as a device whose conversion efficiency can exceed the 40.7% limiting value of single-gap cells. It utilizes the so-called intermediate-band material, characterized by the existence of a band that splits an otherwise conventional semiconductor bandgap into two sub-bandgaps. Two important criteria for its operation are that the carrier populations in the conduction, valence, and intermediate-bands are each described by their own quasi-Fermi levels, and that photocurrent is produced when the cell is illuminated with below-bandgap-energy photons. IBSC prototypes have been manufactured from InAs quantum dot structures and analyzed by electroluminescence and quantum efficiency measurements. We present evidence to show that the two main operating principles required of the IBSC are fulfilled.