A new approach to high-efficiency multi-band-gap solar cells
- 1 April 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (7), 3490-3493
- https://doi.org/10.1063/1.345339
Abstract
The advantages of using multi‐quantum‐well or superlattice systems as the absorbers in concentrator solar cells are discussed. By adjusting the quantum‐well width, an effective band‐gap variation that covers the high‐efficiency region of the solar spectrum can be obtained. Higher efficiencies should result from the ability to optimize separately current and voltage generating factors. Suitable structures to ensure good carrier separation and collection and to obtain higher open‐circuit voltages are presented using the (AlGa)As/GaAs/(InGa)As system. Efficiencies above existing single‐band‐gap limits should be achievable, with upper limits in excess of 40%.Keywords
This publication has 7 references indexed in Scilit:
- Tunable superlattice p-i-n photodetectors: characteristics, theory, and applicationIEEE Journal of Quantum Electronics, 1988
- Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structuresApplied Physics Letters, 1987
- Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built-in shadow maskApplied Physics Letters, 1987
- Variably spaced superlattice energy filter, a new device design concept for high-energy electron injectionApplied Physics Letters, 1986
- Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructuresApplied Physics Letters, 1984
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cellsJournal of Applied Physics, 1980