Energy band discontinuities in heterojunctions measured by internal photoemission
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5), 503-505
- https://doi.org/10.1063/1.96107
Abstract
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1−xAs heterojunctions. We have found for x0.4, the apparent Δ Ec is considerably smaller.Keywords
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