Properties of Ferroelectric BaMgF4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing

Abstract

Substrate orientation dependence of metal-ferroelectric BaMgF₄-silicon capacitors obtained by post-deposition rapid thermal annealing was investigated. Fluoride films were deposited on Si(100)-, (110)- and (111)-oriented wafers in an ultrahigh-vacuum system at a substrate temperature of 300°C. Post-deposition annealing was conducted for 10 s at 600°C. The resistivity of the ferroelectric BaMgF₄ film increased from a typical value of 1–2×10¹¹ Ω\cdotpcm before annealing to about 5×10¹³ Ω\cdotpcm at 1 MV/cm, and the interface state density of the BaMgF₄/Si interface decreased to 5–8×0¹⁰/cm²·eV. Apparent remanent polarizations of BaMgF₄ films on (100)- and (111)-oriented silicon wafers were about 0.5–0.6 µC/cm² and that of film on the (110) wafer was about 1.2 µC/cm².