“Thermalization gap” excitation photoluminescence and optical absorption in amorphous silicon-hydrogen alloys
- 31 May 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (5), 357-363
- https://doi.org/10.1016/0038-1098(81)90258-1
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- A geminate recombination model for photoluminescence decay in plasma-deposited amorphous Si:HSolid State Communications, 1980
- Band-Tail Absorption in Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- Optical absorption of SiH0.16 films near the optical GAPJournal of Non-Crystalline Solids, 1980
- Amorphous silicon-hydrogen-fluorine-oxygen alloysJournal of Non-Crystalline Solids, 1980
- The interpretation of transport results in amorphous siliconJournal of Non-Crystalline Solids, 1980
- Recombination in plasma-deposited amorphous Si:H. Luminescence decayPhysical Review B, 1979
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Photoluminescence and lifetime studies on plasma discharge a-SiJournal of Non-Crystalline Solids, 1979
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978