Luminescence characterization of CdTe:In grown by molecular beam epitaxy
- 10 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23), 2651-2653
- https://doi.org/10.1063/1.104797
Abstract
We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm−3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.Keywords
This publication has 9 references indexed in Scilit:
- Shallow donors in CdTePhysical Review B, 1990
- Photoassisted molecular beam epitaxy of wide gap II–VI heterostructuresJournal of Crystal Growth, 1990
- Spectroscopic study of CdTe layers grown by molecular-beam epitaxy on (001) and (111) Cd0.96Zn0.04Te substratesJournal of Applied Physics, 1989
- Low-temperature photoluminescence study of doped CdTe films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1987
- Donors and acceptors in tellurium compounds; The problem of doping and self-compensationJournal of Crystal Growth, 1985
- Acceptor states in CdTe and comparison with ZnTe. General trendsPhysical Review B, 1984
- Effects of Cd-vapor and Te-vapor heat treatments on the luminescence of solution-grown CdTe:InJournal of Applied Physics, 1982
- Electron and exciton excited states of the neutral donor in Zn TeSolid State Communications, 1979
- Screening and Stark Effects Due to Impurities on Excitons in CdSJournal of the Physics Society Japan, 1970