Mono- and Bi-Layer Superlattices of GaAs and AlAs

Abstract

The synthesis and X-ray diffraction study of superlattices grown by exactly alternate depositions of monolayers of GaAs and AlAs are reported. The mono- and bi-layer superlattices were synthesized by molecular beam epitaxy utilizing the intensity oscillations in the specularly reflected beam in the RHEED pattern during growth. The X-ray diffraction profile implies that the synthesized monolayer crystal has a simple cubic symmetry. The satellite diffractions for the synthesized bilayer superlattice were clearly detected at L=0.5, 1.0, 1.5, 2.5, 3.0 and 3.5.