Far-Infrared Cyclotron Resonance in the Inversion Layer of Silicon

Abstract

Cyclotron resonance in the $n$-type inversion layer of silicon has been observed at 4.2°K for electron densities between (0.38 and 9.0) × ${10}^{12}$/${\mathrm{cm}}^2$. The electron mass is $m^{*}=(0.20\mathrm{}\pm 0.01)m_0$ and independent of electron density. The far-infrared mobility decreases monotonically as the electron density increases, in marked contrast to the dc mobility which exhibits a strong maximum in the same range of electron concentrations.