Surface states on Si(111)-(2×1)
- 15 August 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (4), 2003-2008
- https://doi.org/10.1103/physrevb.24.2003
Abstract
Surface-state energy bands for a single-domain Si(111)-(2×1) surface have been studied with angle-resolved photoemission using synchrotron radiation. From the angular photoelectron distributions seen with a display-type spectrometer, we conclude that there are two surface states near the top of the valence bands , one at eV around [0.65 eV full width half maximum (FWHM)] and a second at eV (0.4 eV FWHM) along the line . These states are found to be nearly dispersionless along the symmetry lines and . Their range of existence can be related to different gaps in the projected bulk bands. The lower surface state lies in a band gap above the point which we find at eV. Our findings are not well described by band calculations reported to date which use buckled-surface model geometries. Our results also indicate that several discrepancies among different reported experimental results are likely due to multidomain cleavage effects. We conclude that either the geometry of Si(111)-(2×1) has not yet been determined unambiguously or that the surface states cannot be described by a bandlike model which is the basis of present calculations.
Keywords
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