1.6 µm wavelength GaInAsP/InP lasers prepared by two-phase solution technique
- 1 May 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (5), 635-640
- https://doi.org/10.1109/jqe.1981.1071159
Abstract
Reduction of the threshold current of GaInAsP lasers with an antimeltback layer was studied in the wavelength range 1.50-1.65 \mu n. The two-phase solution growth technique was applied using a relatively low temperature and a slow cooling rate of 0.17°C/min to reduce the active layer thickness. The antimeltback layer with a bandgap wavelength of 1.35 μm resulted in a flat active layer and eliminated the melt-back problem completely. From experiments and calculations we found that both the carrier and the optical confinement of this structure, having an antimeltback layer, were almost the same as those for the conventional InP cladding structure. A threshold eurrent density as low as 1.2 kA/cm 2 and an active layer thickness of 0.20μm were obtained at these wavelengths. The lattice-match condition of low-temperature growth was studied. In the low-temperature growth, the longer wavelength lasers were grown with the same amount of InAs. J_{th}/d was independent of the growth condition ( T_{S}, T_{G} ) and had a value of 5-6 kA/cm 2 . μm.Keywords
This publication has 16 references indexed in Scilit:
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band AbsorptionJapanese Journal of Applied Physics, 1980
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm WavelengthJapanese Journal of Applied Physics, 1980
- Low temperature liquid phase epitaxy growth for room-temperature cw operation of 1.55-μm InGaAsP/InP double-heterostructure laserApplied Physics Letters, 1980
- 1.5–1.7 μm v.p.e. InGaAsP/InP c.w. lasersElectronics Letters, 1980
- New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasersElectronics Letters, 1980
- Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasersElectronics Letters, 1980
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µmJapanese Journal of Applied Physics, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Hall Effect and Resistivity of Zn-Doped GaAsJournal of Applied Physics, 1966