Hopping transport in a-Ge and a-Si
- 1 June 1983
- journal article
- letter
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (6), L93-L98
- https://doi.org/10.1080/01418638308228274
Abstract
An unreasonably large pre-exponential factor for conductivity is an old problem with interpretations of hopping transport data on a-Si and a-Ge. It is shown that an appropriate concave density of states eliminates this problem, and explains some other experimental features. Results of a percolation theory for exponential densities of states are presented. Comparison with experiments on high-density Si and Ge gives Bohr radii of 6 and 13 Å and values for N(E F) of 7 × 1020 and 2 × 1018 eV−1 cm−3, respectively.Keywords
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