Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots
- 8 April 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (14), 2490-2492
- https://doi.org/10.1063/1.1467974
Abstract
We report the realization of electron intraband absorption based middle- (∼5.6 μm) and long- (∼10 μm) wavelength infrared (IR) photoresponse for normally incident radiation on InGaAs-capped GaAs(001)/InAs quantum dots(QDs) in a n–i( QD )–n structure. The relative photoresponse in this dual-wavelength structure is tunable up to two orders of magnitude with bias. The full width at half maximum of the long-wavelength IR intraband photocurrent peak at 80 K is as narrow as 8.2 meV.Keywords
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