Influence of the floating substrate potential on the characteristics of ESFI MOS transistors
- 30 April 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (4), 309-314
- https://doi.org/10.1016/0038-1101(75)90083-0
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Avalanche Breakdown in SiliconPhysical Review B, 1954