Über das verhalten von kohlenstoff beim zonenziehen von silicium
- 30 November 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (11), 915-921
- https://doi.org/10.1016/0038-1101(69)90050-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Zum Einbau von Kohlenstoff bei der Herstellung von ReinstsiliciumSolid-State Electronics, 1968
- The Influence of Carbon on Precipitation of Copper in Silicon Single CrystalsPhysica Status Solidi (b), 1967
- Concerning the carbon content in semiconductor siliconSolid-State Electronics, 1965
- Tripyramids and associated defects in epitaxial silicon layersPhilosophical Magazine, 1965
- TriPyramid Growth of Epitaxial SiliconJournal of the Electrochemical Society, 1965
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953