CW oscillation characteristics of GaAs Schottky-barrier gate field-effect transistors

1 January 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 63 (2), 320-321
https://doi.org/10.1109/PROC.1975.9740

Abstract

The CW oscillation characteristics of GaAs Schottky-barrier gate FET's have been examined at 10 GHz. The maximum output power of 41.2 mW and the maximum efficiency of 15.6 percent have been obtained for the GaAs FET with a gate length of 1.5 µm and an electrode width of 300 µm. The experimental results have shown that the GaAs FET possesses promising features for an oscillator application as well as an amplifier application.

Keywords

GALLIUM ARSENIDE
VOLTAGE
POWER GENERATION
SCHOTTKY DIODES
MICROWAVE FETS
FREQUENCY
MICROWAVE OSCILLATORS
CIRCUITS
GUNN DEVICES
SIGNAL DESIGN

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