Measurement of minority carrier capture cross sections and application to gold and platinum in silicon
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3), 1543-1553
- https://doi.org/10.1063/1.330655
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- A model for the interpretation of measurements of photoionisation and capture cross sections associated with deep-level impuritiesJournal of Physics C: Solid State Physics, 1981
- Complex nature of gold-related deep levels in siliconPhysical Review B, 1980
- Electron and Hole Capture at Au and Pt Centers in SiliconPhysical Review Letters, 1980
- Deep-state-controlled minority-carrier lifetime in n-type gallium phosphideJournal of Applied Physics, 1979
- Photoionization cross-sections and energy levels of gold, iron, platinum, silver, and titanium in siliconJournal of Electronic Materials, 1979
- Thermodynamical analysis of optimal recombination centers in thyristorsSolid-State Electronics, 1978
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Entropy of ionization and temperature variation of ionization levels of defects in semiconductorsPhysical Review B, 1976
- Electron drift velocity in siliconPhysical Review B, 1975
- Drift velocity of electrons and holes and associated anisotropic effects in siliconJournal of Physics and Chemistry of Solids, 1971