Thermal Expansion Of GaN And Ain
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The temperature dependence of the thermal expansion and the bulk modulus are critical for predicting the residual stress distribution in epitaxial films and provides information relevant for interatomic potentials and equations of state. The thermal expansions of aluminum nitride (AIN) and gallium nitride (GaN) are calculated with two models that employ the limited elastic and lattice parameter data. These semiempirical models allow prediction of the thermal expansions to higher temperatures. Calculated results are compared with experimental data.Keywords
This publication has 28 references indexed in Scilit:
- Thermophysical properties of aluminum nitride ceramicPhysics of the Solid State, 1997
- A model for evaluating and predicting high-temperature thermal expansionJournal of Materials Research, 1996
- Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InNPhysical Review B, 1996
- Thermal expansion, molar volume and specific heat of diamond from 0 to 3000kJournal of Electronic Materials, 1996
- Thermal Expansion of β-Sic, Gap and InpMRS Proceedings, 1995
- Vibrational Spectroscopy of Aluminum NitrideJournal of the American Ceramic Society, 1993
- Thermal expansion of single-crystal manganosite.Journal of Physics of the Earth, 1979
- Thermal expansion of some group IV elements and ZnSPhysica Status Solidi (a), 1975
- Nonmetallic crystals with high thermal conductivityJournal of Physics and Chemistry of Solids, 1973
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969