Electrical properties and devices of large-diameter single-walled carbon nanotubes
- 1 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (6), 1064-1066
- https://doi.org/10.1063/1.1448850
Abstract
Individual large-diameter (∼3 to 5 nm) semiconducting single-walled carbon nanotubes (SWNTs) are found to exhibit ambipolar field-effect transistor (FET) behavior, with easily accessible n- and p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs in this relatively large-diameter regime. The ambipolar SWNT-FETs can be readily used as building blocks for functional nanoelectronic devices such as voltage inverters that operate under ambient conditions.Keywords
This publication has 16 references indexed in Scilit:
- Logic Circuits with Carbon Nanotube TransistorsScience, 2001
- Molecular photodesorption from single-walled carbon nanotubesApplied Physics Letters, 2001
- Formation of a p-type quantum dot at the end of an n-type carbon nanotubeApplied Physics Letters, 2001
- Alkaline metal-doped n-type semiconducting nanotubes as quantum dotsApplied Physics Letters, 2000
- Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular ComputingScience, 2000
- Chemical doping of individual semiconducting carbon-nanotube ropesPhysical Review B, 2000
- Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diametersApplied Physics Letters, 2000
- Nanotube Molecular Wires as Chemical SensorsScience, 2000
- Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubesApplied Physics Letters, 1999
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998