The Effect of Nondilute Dopant-Defect Pair Concentrations on Arsenic Diffusion
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in SiApplied Physics Letters, 1991
- Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in siliconApplied Physics Letters, 1985
- Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kineticsJournal of Applied Physics, 1982