Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP
- 31 December 1986
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 12 (1-4), 1-28
- https://doi.org/10.1016/0146-3535(86)90004-3
Abstract
No abstract availableKeywords
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