Electronic characterization of indium tin oxide/silicon photodiodes
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (9), 4833-4837
- https://doi.org/10.1063/1.325513
Abstract
Photodiodes of indium tin oxide deposited on single‐crystal p‐silicon are analyzed with respect to their electronic properties. Dark measurements include the current and capacitance dependences on voltage and temperature. Photocurrent measurements reveal the relationship to the illumination intensity, temperature, and wavelength of light. Analysis reveals a relatively large, but temperature‐dependent, built‐in voltage and a small interface recombination probability.Keywords
This publication has 11 references indexed in Scilit:
- Operation of ITO/Si heterojunction solar cellsApplied Physics Letters, 1976
- Efficient photovoltaic heterojunctions of indium tin oxides on siliconApplied Physics Letters, 1976
- Electrical and Optical Properties of In2O3/n-Si PhotodiodesJapanese Journal of Applied Physics, 1976
- Photocurrent suppression in heterojunction solar cellsApplied Physics Letters, 1975
- Temperature effects in Schottky-barrier silicon solar cellsApplied Physics Letters, 1975
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- The capacitance of p-n heterojunctions including the effects of interface statesIEEE Transactions on Electron Devices, 1967
- nGepGaAs HeterojunctionsSolid-State Electronics, 1966
- Current/voltage characteristics of p-n Ge-Si and Ge-GaAs heterojunctionsProceedings of the Institution of Electrical Engineers, 1966
- Silicon Solar Energy ConvertersJournal of Applied Physics, 1955