High pressure vapor growth of GaN
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (1), 77-82
- https://doi.org/10.1016/0022-0248(82)90014-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditionsJournal of Applied Physics, 1980
- Properties of VPE-grown GaN doped with Al and some iron-group metalsJournal of Applied Physics, 1979
- Variation of lattice parameters in GaN with stoichiometry and dopingPhysical Review B, 1979
- Effect of growth parameters on the properties of GaN : Zn epilayersJournal of Crystal Growth, 1977
- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Properties of Zn-doped GaN. II. PhotoconductivityJournal of Applied Physics, 1974
- Crystal Growth and Characterization of Gallium NitrideJournal of the Electrochemical Society, 1974
- The Equilibrium Pressure of N2 over GaNJournal of the Electrochemical Society, 1972
- Thermal stability of indium nitride at elevated temperatures and nitrogen pressuresMaterials Research Bulletin, 1970
- Injection electroluminescenceSolid-State Electronics, 1961