Theoretical characteristics of insulated gate field effect devices
- 1 April 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (4), 375-379
- https://doi.org/10.1016/0038-1101(65)90114-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Physical phenomenon responsible for saturation current in field effect devicesSolid-State Electronics, 1963
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- Semiconductor Surface VaractorBell System Technical Journal, 1962
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953