Epitaxial Growth and Properties of Ca1-xSrxCuO2 Thin Film (x=0.18 to 1.0) Prepared by Co-Deposition and Atomic Layer Stacking
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3A), L217
- https://doi.org/10.1143/jjap.31.l217
Abstract
Thin films of Ca1-x Sr x CuO2 have been prepared on SrTiO3 (100) substrates by co-deposition of all elements and successive stacking of atomic layers. When all the elements are deposited simultaneously, Ca1-x Sr x CuO2 films can be formed only within the narrow range of Sr concentration near x=0.2. On the other hand, by stacking atomic layers of Ca(Sr)O x and CuO x , the appropriate range becomes much wider and the formation of an infinite layer structure becomes possible, even in Ca free composition, SrCuO2. For the SrCuO2 thin film, a diamagnetic transition and decrease of resistance have been observed at 65 K.Keywords
This publication has 8 references indexed in Scilit:
- Superconductivity in the Ba-Sr-Cu-O systemPhysica C: Superconductivity and its Applications, 1991
- Electron-doped superconductivity at 40 K in the infinite-layer compound Sr1–yNdyCu02Nature, 1991
- Atomic layer and unit cell layer growth of (Ca,Sr)CuO2 thin film by laser molecular beam epitaxyApplied Physics Letters, 1991
- Superconducting superlattices: Verification of two-dimensional nature in high T c Bi2Sr2(Ca1−xYx)Cu2O8 superconductorsApplied Physics Letters, 1990
- Tailored thin films of a superconducting Bi-Sr-Ca-Cu oxide prepared by incorporation of exotic atoms—control of the distance between CuO2 layersApplied Physics Letters, 1990
- Low-temperature formation of multilayered Bi(Pb)-Sr-Ca-Cu-O thin films by successive deposition using laser ablationApplied Physics Letters, 1989
- The parent structure of the layered high-temperature superconductorsNature, 1988
- Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growthApplied Physics Letters, 1985