On the high frequency excess noise and equivalent circuit representation of the MOS-FET with n-type channel

Publisher Website

31 March 1969

journal article
Published by Elsevier in Solid-State Electronics

Vol. 12 (3), 161-176
https://doi.org/10.1016/0038-1101(69)90028-8

Abstract

No abstract available

Keywords

This publication has 9 references indexed in Scilit:

Analysis of high-frequency thermal noise of enhancement mode MOS field-effect transistors
IEEE Transactions on Electron Devices, 1966
The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors
IEEE Transactions on Electron Devices, 1966
Thermal noise in junction-gate field-effect transistors
IEEE Transactions on Electron Devices, 1966
Numerical data on the high-frequency characteristics of thin-film transistors
Solid-State Electronics, 1965
The effect of ambients on the charge density and carrier mobility in a silicon-silicon dioxide interface
Solid-State Electronics, 1965
Theory of noise in metal oxide semiconductor devices
IEEE Transactions on Electron Devices, 1965
Characteristics of the metal-Oxide-semiconductor transistors
IEEE Transactions on Electron Devices, 1964
Small-signal, high-frequency theory of field-effect transistors
IEEE Transactions on Electron Devices, 1964
Sympathetic Identification With the Underdog
Public Opinion Quarterly, 1963

Cited by 27 articles