Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3∕SrTi0.99Nb0.01O3 p-n heterojunctions
- 25 February 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (8)
- https://doi.org/10.1063/1.2887905
Abstract
Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interfaceKeywords
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