Charge retention effect in metal–oxide–semiconductor structure containing Si nanocrystals prepared by ion-beam-assisted electron beam deposition
- 21 June 2001
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 83 (1-3), 145-151
- https://doi.org/10.1016/s0921-5107(01)00510-4
Abstract
No abstract availableKeywords
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