High quality niobium nitride-niobium Josephson tunnel junctions
- 1 May 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 19 (3), 831-834
- https://doi.org/10.1109/tmag.1983.1062554
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- High quality refractory Josephson tunnel junctions utilizing thin aluminum layersApplied Physics Letters, 1983
- The effects of methane in the deposition of superconducting niobium nitride thin films at ambient substrate temperatureJournal of Applied Physics, 1983
- Deposition Profile Calculation for Sputtering with Two Facing TargetsJapanese Journal of Applied Physics, 1982
- Selective niobium anodization process for fabricating Josephson tunnel junctionsApplied Physics Letters, 1981
- Niobium oxide-barrier tunnel junctionIEEE Transactions on Electron Devices, 1980
- Effect of Process Variables on Electrical Properties of Pb-Alloy Josephson JunctionsIBM Journal of Research and Development, 1980
- Effects of deposition parameters on the properties of superconducting rf reactively sputtered NbN filmsJournal of Vacuum Science and Technology, 1980
- New technique for electron-tunneling junction fabrication and its application to tantalum and niobiumPhysical Review B, 1978
- Properties of superconducting rf sputtered ultrathin films of NbJournal of Vacuum Science and Technology, 1976
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963