A Low-Cost Ion Assisted Evaporation Technique for AuGe/n-GaAs Contact Fabrication
- 16 July 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 120 (1), K45-K47
- https://doi.org/10.1002/pssa.2211200136
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Contact Resistance and Contact ResistivityJournal of the Electrochemical Society, 1972