Transition line strengths for excitons bound to neutral acceptors in direct-gap semiconductors
- 11 June 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (11), 1971-1974
- https://doi.org/10.1088/0022-3719/6/11/022
Abstract
The line strength for transitions to or from the J=1/2 or J=5/2 level of the neutral acceptor bound exciton in direct-gap semiconductors is shown to be equal to one quarter of the line strength to or from the J=3/2 level.Keywords
This publication has 3 references indexed in Scilit:
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- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1972
- Photoluminescence and Photoconductivity in Undoped Epitaxial GaAsPhysical Review B, 1969