A Limitation of the Pulsed Capacitance Technique of Measuring Impurity Profiles

Abstract

This paper reports the results of an investigation of a limitation of the pulsed‐capacitance technique for measuring impurity profiles in semiconductors (1). The limitation arises from the neglect of the majority carriers in the derivation of the previously published equation. The results, for the mathematically tractable example of a uniform profile, show that there is a minimum depth at which the technique is accurate and that this depth is a function of impurity concentration—decreasing with increasing concentration. This is a fundamental limitation of the technique as opposed to an instrumentation limitation.