GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxy
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (5), 288-290
- https://doi.org/10.1063/1.1655476
Abstract
GaAs–Alx Ga1−x As double‐heterostructure (DH) lasers that exhibit laser properties similar to DH lasers prepared by liquid‐phase epitaxy have been prepared by molecular‐beam epitaxy. For a structure with a 0.53‐μ‐thick active layer, the as‐grown threshold current density at room temperature was 3.5×104 A/cm2, but by annealing the threshold was reduced to 4.0×103 A/cm2.Keywords
This publication has 6 references indexed in Scilit:
- Interface and doping profile characteristics with molecular-beam epitaxy of GaAs: GaAs voltage varactorJournal of Applied Physics, 1974
- Properties of Schottky barriers and p-n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layersJournal of Applied Physics, 1974
- Three-dimensional light guides in single-crystal GaAs–Alx Ga1 − xAsApplied Physics Letters, 1973
- Magnesium-doped GaAs and Alx Ga1−x As by molecular beam epitaxyJournal of Applied Physics, 1972
- Growth of three-dimensional dielectric waveguides for integrated optics by molecular-beam-epitaxy methodApplied Physics Letters, 1972
- Semiconductor LasersApplied Optics, 1966