TRANSIENT HIGH-DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS
- 15 May 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (10), 377-380
- https://doi.org/10.1063/1.1653032
Abstract
The properties of high‐density injection into p‐InSb at 77 °K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density‐dependent growth times.Keywords
This publication has 5 references indexed in Scilit:
- LOW FIELD INJECTION IN n-InSbApplied Physics Letters, 1969
- Transient Double Injection in Trap-Free SemiconductorsJournal of Applied Physics, 1969
- Transient Double Injection in Semiconductors with TrapsJournal of Applied Physics, 1969
- TRANSIENT DOUBLE INJECTION IN GERMANIUMApplied Physics Letters, 1968
- Recombination Centers in InSbJournal of Applied Physics, 1967