Limits of acceptor impurity doping in wide band gap II–VI semiconductors
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4), 305-309
- https://doi.org/10.1016/0022-0248(94)90826-5
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSePhysical Review B, 1993
- Effect of N doping on the structural properties of ZnSe epitaxial layers grown by molecular beam epitaxyApplied Physics Letters, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- High-resolution study of stimulated emission from blue-green laser diodesApplied Physics Letters, 1992
- Native defects and self-compensation in ZnSePhysical Review B, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990