STIMULATED EMISSION IN In1 -xGaxP
- 15 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (10), 430-432
- https://doi.org/10.1063/1.1653258
Abstract
By a modified Bridgman solution‐growth technique employing a small temperature gradient. InP and GaP source crystal are used to saturate an In solution at ∼ 925°C and grow In1−xGaxP (x ∼ 0.3) at ∼ 925°C. This material is shown to exhibit stimulated emission.Keywords
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