Semiconductor Materials for 2∼4 µm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers

Abstract

Two III-V quaternary systems, In _x Ga_1-x As _y Sb_1-y lattice-matched to GaSb and InAs_1-x-y P _x Sb _y lattice-matched to InAs, were investigated to fabricate double heterostructure (DH) lasers for longer wavelength optical sources as compared with InGaAsP/InP DH lasers. DH lasers with an emission wavelength around 2 µm were fabricated by using InGaAsSb with GaSb enriched composition as an active layer and AlGaAsSb as confinement layers. The pulsed room temperature operation at 1.8 µm wavelength was performed for In_0.05Ga_0.95As_0.04Sb_0.96/Al_0.2Ga_0.8As_0.02Sb_0.98 DH lasers fabricated by liquid phase epitaxy. For 3∼4 µm wavelength optical sources, it has shown that InAsPSb is one of the most promising materials.