Oscillatory Photoconductivity of Epitaxial GaAs

Abstract

Oscillation due to interaction of photoexcited electrons and optical phonons has been observed in the intrinsic photoconductivity spectrum of epitaxial GaAs at 2°K. From the spacing of the minima of the oscillation, values have been obtained for the energy gap (1.520 eV) and for the effective-mass ratio for heavy holes and electrons $\frac{m_h}{m_e}=6.2\mathrm{}$.