Horizontal bridgman growth of gaas single crystals
- 1 January 1985
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 20 (1), 21-25
- https://doi.org/10.1002/crat.2170200106
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property RelationshipJournal of the Electrochemical Society, 1982
- Growth of GaAs ingots with high free electron concentrationsJournal of Crystal Growth, 1980
- Determination of the total emittance of n-type GaAs with application to Czochralski growthJournal of Applied Physics, 1980
- Ein Beitrag zur lichtoptischen Orientierungsbestimmung von Galliumphosphid‐EinkristallenCrystal Research and Technology, 1972
- Dislocation Etch Pits in Single Crystal GaAsPhysica Status Solidi (b), 1969