Sputtering of Al2O3 and LiNbO3 in the electronic stopping region
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 64 (1-4), 111-116
- https://doi.org/10.1080/00337578208223000
Abstract
Because of recent interest in the role played by the thermal properties of materials that exhibit high energy sputtering, we have sputtered Al2O3 and LiNbO3 with chlorine ions at energies between 3 MeV and 25 MeV. To detect the sputtered Al and Nb we employ thin carbon catcher foils, which are analyzed with Rutherford scattering in the forward direction. Al surface densities of 1014/cm2 and Nb surface densities of 10l3/cm2 are easily measured. The sputtering yields for both Al2O3 and LiNbO3 increase rapidly with increasing chlorine energy, and the Al and Nb yields are both approximately 0.2 at 20 MeV. Tests for dose, beam current, and contamination effects will be discussed.Keywords
This publication has 6 references indexed in Scilit:
- Desorption of organic compounds from solid surfaces by bombardment with heavy ions from a tandem acceleratorSurface Science, 1980
- Energy dependence of the erosion of H2O ice films by H and He ionsNuclear Instruments and Methods, 1980
- A thermalized ion explosion model for high energy sputtering and track registrationRadiation Effects, 1980
- Sputtering of uranium tetrafluoride in the electronic stopping regionRadiation Effects, 1980
- "Sputtering" of Ice by MeV Light IonsPhysical Review Letters, 1978
- Possible new sputtering mechanism in track registering materialsApplied Physics Letters, 1976