Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 260-265
- https://doi.org/10.1016/0022-0248(89)90397-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionJournal of Crystal Growth, 1987
- Kinetic processes in molecular beam epitaxy of GaAs(100) and AlAs(100) examined via static and dynamic behavior of reflection high-energy electron-diffraction intensitiesJournal of Vacuum Science & Technology A, 1986
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Possible applications of surface-corrugated quantum thin films to negative-resistance devicesThin Solid Films, 1976