Composition and refractive index of Ga1−xAlxAs determined by ellipsometry
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6), 4196-4200
- https://doi.org/10.1063/1.326448
Abstract
The compositions of 42 thin Ga1−xAlxAs layers grown by liquid‐phase epitaxy were measured by reflection ellipsometry. The refractive index n (x) was determined over the composition range x?0.61 at the wavelength λ=546.1 nm. The composition of the calibration samples was obtained from electron microprobe analysis. The 800 °C solidus isotherm of the Ga‐Al‐As phase diagram is determined and compared with existing phase diagrams. Furthermore, the thickness of the natural oxide layers on the samples was measured as a function of alloy composition and of time.Keywords
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